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Ge (Germanium)
ゲルマニウム
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Ge- Main Properties
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応用
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Diode, Transistor, Hall element, IR optics…etc
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クラス/結晶構造
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Cubic (Diamond)
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育成方法
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CZ method
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格子定数、Å
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5.6754
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密度、g/cm3
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5.765
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バンドギャップ,Eg(eV)
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0.67
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融点,℃
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937.4
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Typical Properties:
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Parameters / dopant
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Sb doped
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In or Ga doped
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Undoped
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Conductor type
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N
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P
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−
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Resistivity (Ω.cm)
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0.05
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0.05 - 0.1
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> 35
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EPD (cm-2 )
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< 4x103/cm2
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< 4x103/cm2
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< 4x103/cm2
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Crystal Grades and Application
(Please specify when you order)
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Electronic Grade: Used for diodes and transistors
Infrared Grade: Used for IR optical window
Cell Grade: Used for substrates of solar cell
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Standard Size:
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面方位
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<111>, <100> and <110> ± 0.5o or special orientation
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アズカット
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f1" ~ f5" diameter x 200 mm Length
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ウァハ−両面又は片面研磨
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f 1"x 0.30 mm f2"x0.5mm f4"x0.5mm f5"x0.6mm
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Special size and orientation are available upon request
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お問い合わせ |
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株式会社ネオトロン |
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